The International Workshop on Gallium Oxide and Related Materials (IWGO-6) is the most prestigious international forum for Ga2O3 and related materials. The sixth workshop is scheduled for August 2-7, 2026, in College Park, Maryland.
The program covers a wide range of topics from processing to theory/modeling, encompassing various aspects such as characterization, polymorphism, bulk growth, and devices.
Dr. Zbigniew Galazka – Leibniz Institute for Crystal Growth (IKZ) is a crystal growth specialist for over 30 years, experienced in growth of different oxide single crystals for a variety of applications in both academic research (Institute of Electronic Materials Technology, Poland; and IKZ-Berlin, Germany), and large-scale industrial developments (Photonic Materials, UK; and Saint-Gobain Crystals and Detectors, France). His current research at IKZ-Berlin focuses on the fast-emerging field of Transparent Semiconducting Oxides (TSOs) to bring this class of materials to a higher level in terms of bulk crystal availability, including novel materials, and explore their properties that can be interesting for future applications, such as power electronics and UV optoelectronics.
Kohei Sasaki was born in Sendai, Japan, in 1981. He received his M.Eng. degree from Nagaoka University of Technology in 2006 and began his career at Tamura Corporation, where he pioneered ozone-MBE-based Ga2O3 homoepitaxial growth. He subsequently led the development of Ga2O3 power devices, including MOSSBDs, JBS diodes, and MOSFETs. He earned his Ph.D. in Engineering from Kyoto University in 2016. In 2018, he joined Novel Crystal Technology, Inc., where he advanced high-current (100-A class) Ga2O3 Schottky barrier diodes using low-defect-density epitaxial films grown by halide vapor phase epitaxy. He currently serves as CTO and Director of Novel Crystal Technology, Inc., leading the development of next-generation ultra-wide-bandgap power devices.
Yuhao Zhang is currently a Full Professor with the Department of Electrical and Computer Engineering of the University of Hong Kong (HKU). He also serves as the Associate Director of the HKU Centre for Advanced Semiconductors and Integrated Circuits. Before joining HKU, he was the Shirish S. Sathaye Associate Professor with Virginia Tech, leading the power semiconductor research at the Center for Power Electronics Systems, the largest academic research center in power electronics in the U.S. He received his Ph. D. and S. M., both in electrical engineering from Massachusetts Institute of Technology (MIT) in 2017 and 2013, respectively. He has authored over 200 papers (including 7 Nature/Science-series papers, 21 IEDM papers, 20+ T-PEL papers as the corresponding author) and 2 book chapters and holds 8 granted U. S. patents. He is a co-author of over 10 highlight/feature/prize papers. His work has been cited over 13,000 times with a h-index of 59 and been widely covered by Nature Electronics, Semiconductor Today, Compound Semiconductors, EE Times, etc. over 100 times.
He currently serves as the Chair of the Power Devices and ICs Technical Committee of the IEEE Electron Device Society, an Associate Editor-in-Chief for IEEE Electron Device Letters, an Associate Editor for IEEE Transactions on Power Electronics, and the TPC member of many conferences (e.g., IEDM, APEC, WiPDA). He received the MIT Microsystems Technology Laboratories Doctoral Dissertation Award, two IEEE George Smith Awards (best paper award of the year in IEEE Electron Device Letters), four Technical Highlights of IEEE International Electron Devices Meeting (IEDM), IEEE William M. Portnoy 1st Prize Paper Award, the National Science Foundation CAREER Award, the Outstanding New Assistant Professor Award and Faculty Fellow Award of Virginia Tech, the Office of Naval Research Young Investigator Award, the Compound Semiconductor Week Young Scientist Award, and the He Xiang Jian Young Scientist Award. His students received the Ph.D. Thesis Talk Award of the IEEE Power Electronics Society and several APEC Best Presentation Awards.
